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Dual In-Series Small-Signal Switching Diode LSD2004SLT1 Silicon Epitaxial Planar Diode Fast switching dual in-series diode, especially suited for applications requiring high voltage capability Top View Driver Marking LSD2004SLT1 =DB6 Maximum Ratings and Thermal Characteristics Parameter Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Forward Current (continuous) Peak Repetitive Forward Current Non-Repetitive Peak Forward Current at tp = 1s at tp = 1s Power Dissipation Typical Thermal Resistance Junction to Ambiant Air Junction Temperature Storage Temperature Range TA = 25C unless otherwise noted Symbol VR VRRM IRRM IF IRFM IFSM Ptot RJA Tj TS Value 240 300 200 225 625 Unit V V mA mA mA 4 A 1 350 mW 357 C/W 150 C -65 to +150 C LSD2004SLT11/2 LSD2004SLT1 Electrical Characteristics Parameter Symbol Reverse Breakdown Voltage VBR Leakage Current Forward Voltage Capacitance Reverse Recovery Time TJ = 25C unless otherwise noted Test Condition IR = 100A VR = 240V IR VR = 240V, Tj = 150C IF = 20mA VF IF = 100mA VF=VR=0 Ctot f=1MHz IF=IA=30mA trr Irr=30mA,RL=100 Min 300 Typ Max 100 100 0.87 1 5 50 Unit V nA A V pF ns SOT-23 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2.CONTROLLING DIMENSION:INCH LSD2004SLT12/2 |
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